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Electronics/How 3nm Transistors & EUV Lithography Work
ElectronicsTechnical8 min

How 3nm Transistors & EUV Lithography Work

Etching 50 billion nanoscopic Gate-All-Around (GAAFET) transistors onto silicon using 13.5nm extreme ultraviolet plasma lasers.

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13.5nm EUV SOURCE50kHz Tin Droplet Plasma (200,000°C)Mo/Si Bragg Mirror (40 Layers)3nm Circuit Mask3nm GATE-ALL-AROUND (GAAFET) NANOSHEETSOURCEn+ SiGeDRAINn+ SiGeNanosheet Ribbon #1 (3nm x 30nm)Nanosheet Ribbon #2 (3nm x 30nm)Nanosheet Ribbon #3 (3nm x 30nm)HIGH-κ METAL GATE360° Electrostatic Gate Control

Step 11. Molten Tin Laser Plasma Generation

High-power CO2 laser strikes molten tin droplet at 50 kHz, producing 13.5nm EUV light.

A 200,000°C tin plasma radiates extreme ultraviolet photons in high vacuum.

Step 1 of 4How 3nm Transistors & EUV Lithography Work
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Target Audience:Curious Beginners
Transistors are microscopic electronic on/off switches. Modern phone chips pack over 50 billion of them into a piece of silicon smaller than your fingernail.

Key Takeaways

  • A transistor turns electric current on and off billions of times per second (1s and 0s).
  • Extreme Ultraviolet (EUV) light prints nanometer-scale circuits using mirrors instead of glass lenses.
  • Gate-All-Around (GAAFET) wraps the electrical control gate around all 4 sides of the channel.

Billions of Switches on a Fingernail

Every app, game, and AI model is powered by billions of microscopic switches called transistors. If a transistor was the size of a marble, your smartphone processor would be the size of a whole continent!

To print features smaller than a single strand of DNA (3 nanometers), chipmakers use EUV lithography machines that shoot molten tin droplets with high-power lasers 50,000 times per second to create extreme ultraviolet light.
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Why did semiconductor engineers transition from 2D Planar transistors to 3D FinFET and Gate-All-Around (GAAFET) architectures?